Power Integrations Rates PowiGaN Technology at 2,200 V for High-Voltage Systems
The rating targets EVs, data centers and renewable energy systems as they shift to higher-voltage architectures.
Power Integrations has rated its PowiGaN gallium nitride technology at up to 2,200 V, a level the company says exceeds any other commercially available GaN and targets applications in EVs, data centers, renewable energy and high-voltage direct current infrastructure.
What Happened
The San Jose-based semiconductor company announced that its PowiGaN ICs can now operate at 2,200 V, extending gallium nitride into voltage ranges traditionally served by silicon carbide. Power Integrations says the technology enables higher switching frequencies than silicon transistors, allowing passive components to shrink and power density to rise. The company already has 1,700 V parts being designed into single-stage auxiliary power applications for data centers, while 1,250 V parts are positioning as a simpler alternative to stacked solutions in 800 VDC data center architectures. "Our 2,200 V PowiGaN technology provides substantial voltage margin for emerging high-voltage power systems while enabling the high switching frequencies required to maximize power density," said Jennifer Lloyd, President and CEO at Power Integrations.
Why It Matters
As EV manufacturers push toward higher-voltage electrical architectures for faster charging and improved efficiency, the availability of GaN switches rated above 2,000 V could influence how battery management systems and auxiliary power converters are designed. The technology targets future EV battery and auxiliary power systems operating at increasingly higher output voltages, potentially affecting component choices across the supply chain. Yole Group analyst Roy Dagher noted that extending GaN into these higher-voltage applications is part of projected growth for the power GaN device market, which the firm expects to reach $3.5 billion by 2031.
The Bottom Line
Power Integrations' new 2,200 V PowiGaN rating represents a technical milestone for gallium nitride in high-voltage applications, positioning it as an alternative to silicon carbide in EV power systems and other infrastructure markets as those sectors move toward higher bus voltages.
