Para Light Launches ThermaFlat SiC MOSFETs Designed for Low On-Resistance Drift

Para Light Electronics has launched ThermaFlat, a family of silicon carbide (SiC) MOSFETs in 650 V and 1,200 V ratings designed around ultra-low RDS(on) drift technology.

What Happened

ThermaFlat devices address the well-known challenge where on-resistance in SiC MOSFETs rises as junction temperature increases. In benchmark testing of a 650 V, 21 mΩ TO-247 device, Para Light says on-resistance changed by roughly 8% as junction temperature swung from -25° C to +125° C. The company describes the 1,200 V parts as carrying a similar temperature coefficient without providing a specific figure. ThermaFlat I covers both voltage classes in industry-standard packages for mainstream converter topologies. ThermaFlat II pairs the same drift technology with a high gate threshold voltage architecture that Para Light says improves noise immunity and prevents false turn-on, running without a negative gate-off supply.

Why It Matters

Lower on-resistance drift reduces the feedback loop where higher RDS(on) produces more conduction loss, generating additional heat. Designers traditionally address this thermal runaway risk through derating or extra cooling, both of which compromise power density and add cost. For EV charging stations specifically, more stable MOSFET performance under temperature variation could enable simpler thermal management designs and potentially more compact station footprints. The ThermaFlat II series' ability to run without a negative gate rail may also reduce gate-driver complexity, component count and bill-of-materials cost for power electronics manufacturers serving the EV infrastructure market.

The Bottom Line

Para Light lists EV charging stations among target applications alongside AI data centers, battery backup systems, grid energy storage and photovoltaic inverters. The company says it is continuously expanding the portfolio with additional voltage classes, current ratings and package configurations.