NoMIS Power Demonstrates 6.5 kV SiC MOSFET, Begins Sampling to US Customers
The device targets MW-scale EV charging and rail traction applications, with production deliveries slated for Q4 2026.
NoMIS Power has demonstrated its first 6.5 kV large-die silicon carbide MOSFET, with the company now sampling the device to US-based customers ahead of planned production deliveries in Q4 2026.
What Happened
The company measured the demonstration unit at over 8 kV blocking voltage, 90 mΩ on-resistance and 55 A drain current. NoMIS Power says the 6.5 kV family will expand beyond this initial device to include additional on-resistance variants, small-die parts, hybrid junction-barrier Schottky FET (JBSFET) devices and standalone diodes. The company lists high-voltage direct current (HVDC), solid-state transformers, pulsed power, rail traction and MW-scale EV charging among the intended applications. JBSFET construction, according to NoMIS Power, prevents body-diode degradation.
Why It Matters
"Demonstrating 6.5 kV blocking to over 8 kV proves our planar SiC platform scales cleanly from the 3.3 kV devices shipping today into the high-voltage class," said Adam Morgan, co-founder and CEO of NoMIS Power. For MW-scale EV charging infrastructure, these characteristics could influence system efficiency and design complexity.
The Bottom Line
NoMIS Power plans to expand the 6.5 kV family with additional on-resistance variants, small-die parts and JBSFET devices, while targeting Q4 2026 for production deliveries of the initial part.
