ROHM’s SiC MOSFETs Go Into BMW’s Neue Klasse Electric Powertrain

ROHM Semiconductor has confirmed that its silicon carbide (SiC) MOSFETs are being integrated into the electric powertrain of BMW’s upcoming Neue Klasse platform. The components are designed to support key power electronics functions within the vehicle's Gen 6 architecture.

What Happened

The chips are part of the Gen 6 inverter, which is built directly into the electric motor’s housing and operates on an 800 V architecture. While ROHM states that these SiC MOSFETs are designed for energy efficiency and reliable operation under demanding automotive conditions, the company did not disclose the specific device family, voltage class, or the Tier 1 supplier responsible for building the power electronics around the chips. ROHM also declined to provide specific figures for the claimed improvements in driving range, charging performance, or overall vehicle efficiency.

Why It Matters

BMW estimates that the Gen 6 powertrain reduces energy losses by 40% compared to the previous Gen 5 system, while also cutting costs by 20% and weight by 10%. The automaker projects a 20% gain in overall vehicle efficiency, with the new generation expected to charge 30% faster and travel 30% farther than its predecessor. The use of SiC semiconductors is critical to these gains, as they exhibit lower conduction and switching losses than silicon IGBTs at 800 V bus voltages. This efficiency translates directly into extended range at a given battery capacity or additional headroom for faster DC charging.

The Bottom Line

ROHM’s inclusion in BMW’s Neue Klasse powertrain highlights the continued shift toward SiC technology in high-voltage EV architectures. The company has also solidified its position in the broader market through a long-term contract with Vitesco Technologies worth over $1 billion and agreements with United Automotive Electronic Systems and Schaeffler.