AVL and VisIC Move GaN Traction Inverter From Test Bench to Vehicle Demonstrator
The integrated system demonstrated over 99.6% efficiency during earlier WLTC drive-cycle testing on an e-motor test bench.
Mobility technology company AVL and gallium nitride (GaN) semiconductor developer VisIC Technologies have integrated VisIC’s D³GaN power modules into the traction inverter of an AVL vehicle demonstrator, marking a shift from laboratory testing to operational vehicle integration.
What Happened
The demonstrator serves as a platform for evaluating electric propulsion technologies, combining the GaN inverter with an e-axle, power electronics, and vehicle control technologies. The project incorporates components from AVL, NXP Semiconductors, and VisIC. According to the companies, earlier testing on AVL’s e-motor test bench in Germany yielded an inverter efficiency of 99.67% at 10 kHz and more than 99.8% at 5 kHz under WLTC drive-cycle conditions. The companies state this represents an improvement over comparable silicon carbide (SiC) inverters, with a reduction in inverter energy losses of more than 60% under the tested conditions.
Why It Matters
VisIC’s D³GaN technology is designed to combine low switching and conduction losses with high power density for high-power automotive applications. The companies note that reducing switching losses during partial-load operation can improve overall inverter efficiency and reduce cooling requirements. Tamara Baksht, CEO of VisIC Technologies, described the move as an important milestone, stating that GaN is no longer limited to future potential but can be demonstrated in the traction inverter of a real electric vehicle. Mathias Deiml, Technical Lead for GaN Inverter Development at AVL, emphasized that integrating the inverter into a vehicle demonstrator is a critical step in understanding the opportunities and challenges of bringing this technology to future automotive applications.
The Bottom Line
AVL and VisIC previously announced plans to extend VisIC’s GaN-on-silicon platform toward 800 V power modules for higher-voltage battery and drivetrain systems. The companies indicate that the GaN-on-silicon approach utilizes established silicon manufacturing infrastructure and is compatible with 200 mm and 300 mm silicon foundries.
