Navitas Launches 2,300 V Full-Bridge SiC Module for Megawatt Charging
The G4H08MT23GB4 family features an 8 mΩ on-resistance and supports isolation of more than 5 kV.
Navitas Semiconductor has introduced a new family of 2,300 V full-bridge silicon carbide (SiC) power modules aimed at improving efficiency and power density in EV megawatt charging infrastructure, solid-state transformers, and grid-scale storage systems.
What Happened
The new G4H08MT23GB4 family utilizes the SiCPAK form factor and features an on-resistance of 8 mΩ. These modules are built on Navitas’s fourth-generation GeneSiC Trench-Assisted Planar architecture, extending the company’s portfolio of ultra-high-voltage SiC devices. The modules incorporate an aluminum nitride active-metal-braze substrate to provide heat spreading and support isolation exceeding 5 kV. Navitas states that the epoxy-resin potting used in the modules reduces internal stress and limits moisture and contaminant ingress, offering 10 times the thermal conductivity of silicone gel. Additionally, optional high-current press-fit pins provide twice the current-carrying capability per pin compared to standard connections, while an optional pre-applied thermal interface material is designed to simplify heatsink assembly.
Why It Matters
This launch addresses the demand for higher efficiency and reliability in the hardware underpinning megawatt charging and grid infrastructure. The modules are being qualified to AEC-Plus, an internal reliability benchmark that Navitas claims exceeds AEC-Q101 and JEDEC requirements. This qualification process includes dynamic reverse bias and dynamic gate switching tests to simulate fast-switching mission profiles, as well as extended duration static high-temperature and high-voltage tests. "Our fourth-generation GeneSiC Trench-Assisted Planar architecture continues to push the limits of what's possible in ultra-high voltage SiC," said Paul Wheeler, Vice President and General Manager of Navitas's SiC Business Unit. "This new 2300 V module delivers a leading RDS(ON) of any device using the SiCPAK form factor, giving system designers a proven, reliability-tested building block for the solid-state transformers and energy storage systems that are reshaping grid and AI data center infrastructure." Samples are currently available in four configurations, including versions with or without pre-applied TIM and with standard or high-current pins. A double-pulse test system, the EVB-UHVSIC-GB-E-DPT-1, is available on request to help engineers evaluate switching performance.
The Bottom Line
Navitas has released samples of its new 2,300 V SiC modules, targeting applications in EV megawatt charging and grid storage with enhanced thermal management and reliability standards.
