Infineon Processes 300 Mm SiC Wafers Into Functional Power Devices
The milestone was achieved at the Villach fab using existing silicon manufacturing equipment, claiming first-in-industry status.
Infineon Technologies has successfully processed 300 mm silicon carbide (SiC) wafers into functional power devices at its semiconductor fab in Villach, Austria. The company states it is the first to achieve this milestone in a full-scale manufacturing environment by utilizing existing silicon production equipment.
What Happened
According to Infineon, the transition to 300 mm SiC wafers yields 2.3 times as many chips per wafer compared to the standard 200 mm format. The production took place at the Villach facility, leveraging infrastructure already in place for silicon manufacturing. Additionally, Infineon demonstrated the feasibility of its Cold Split technology on 300 mm SiC at its Dresden site. This process, which separates wafers from a SiC boule, reportedly results in less material loss and significantly reduced processing time compared to conventional wire sawing, allowing for more wafers to be harvested from the same crystal with lower capital expenditure.
Why It Matters
This development signals a potential shift in the industrialization of SiC power semiconductors, which are critical components for electric vehicle traction inverters, on-board chargers, and EV charging infrastructure. Infineon’s CoolSiC portfolio also serves large-scale energy storage, industrial drives, and power systems for AI data centers. While the company describes the 300 mm process as demonstrating the potential for future full-scale industrialization, it clarified that the technology and ramp timing will be planned in coordination with customers and partners. Meanwhile, Infineon continues its current 200 mm SiC roadmap. The announcement follows a recent €1.1 billion investment by Infineon in a high-volume manufacturing facility for gallium nitride (GaN) power semiconductors on 300 mm wafers, also located in Villach.
The Bottom Line
Infineon has established a functional 300 mm SiC manufacturing process in Villach, aiming to increase chip yields and efficiency for power electronics. The company remains in the planning phase for full-scale industrialization, working with partners to determine the timeline while maintaining its existing 200 mm production lines.
